Pascal Thome¹, Setareh Medgalchi¹, Felicitas Scholz¹, Gunther Eggeler¹, Jan Frenzel¹; ¹Ruhr-Universität-Bochum

We present the Rotation Vector Base Line Electron Back Scatter Diffraction (RVB-EBSD) method, a new correlative orientation imaging method for scanning electron microscopy (OIM/SEM). The RVB-EBSD method was developed to study small angle orientation defects in single crystals (SX). The technique allows to quantify small misorientation angles between subgrains and to interpret associated accommodation processes in terms of geometrically necessary dislocations (GNDs). The RVB-EBSD method was inspired by previous approaches which use cross correlation EBSD procedures. It applies Gaussian band pass filtering to improve the quality of more than 500 000 experimental patterns. A rotation vector approximation and a correction procedure, which relies on a base line function, are used. The method moreover features a novel way of intuitive color coding which allows to easily appreciate essential features of single crystal defects. In the present work we present examples from RVB-EBSD characterization of single crystals and additively manufactured materials.